Electrical properties of vacuum annealed CdS films
β Scribed by E. Ebenezer; K. R. Murali; Mary Juliana Chockalingam; V. K. Venkatesan
- Publisher
- Springer
- Year
- 1988
- Tongue
- English
- Weight
- 272 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0022-2461
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In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)
Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In