𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical Properties of Annealed InSb Thin Films

✍ Scribed by Rao, S. R. ;Nagabhooshanam, M. ;Babu, V. Hari

Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
159 KB
Volume
81
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Structural and Electrical Properties of
Structural and Electrical Properties of Annealed In–Bi2S3Thin Films
✍ R.SuΓ‘rez Parra; P.J. George; A.E. JimΓ©nez-Gonzalez; L. BaΓ±os; P.K. Nair πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 321 KB

Intrinsic bismuth sulfide deposited on indium thin films (&20 nm) change to n-type when annealed in air or nitrogen atmosphere. As deposited bismuth sulfide on the In films is amorphous and electrically very resistive. Annealing the films in air at 200, 300, and 400°°C results in the formation of In

Electrical properties of vacuum annealed
Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation
✍ Yongshik Kim; Kunihiro Miyauchi; Shun-ichiro Ohmi; Kazuo Tsutsui; Hiroshi Iwai πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 246 KB

In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)