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Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation

✍ Scribed by O. V. Naumova; I. V. Antonova; V. P. Popov; V. F. Stas’

Book ID
110133434
Publisher
Springer
Year
2003
Tongue
English
Weight
82 KB
Volume
37
Category
Article
ISSN
1063-7826

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Electrical Properties of the Si Implanta
Electrical Properties of the Si Implantation in Mg Doped p-GaN
✍ Wei-Chih Lai; M. Yokoyama; Chiung-Chi Tsai; Chen-Shiung Chang; Jan-Dar Guo; Jian 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 122 KB 👁 2 views

This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 40, 100