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Electrical properties of Si implanted with As through SiO2 films

✍ Scribed by Hirao, T.; Fuse, G.; Inoue, K.; Takayanagi, S.; Yaegashi, Y.; Ichikawa, S.; Izumi, T.

Book ID: 111933231
Publisher: American Institute of Physics
Year: 1980
Tongue: English
Weight: 750 KB
Volume: 51
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.327418

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