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Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

✍ Scribed by A. Ashok Kumar; V. Rajagopal Reddy; V. Janardhanam; Hyun-Deok Yang; Hyung-Joong Yun; Chel-Jong Choi

Book ID: 118461594
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 539 KB
Volume: 549
Category: Article
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2012.09.085

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## Abstract The electrical properties and interfacial reactions of Pt/Ru Schottky contacts on n‐type gallium nitride (GaN) have been investigated as a function of annealing temperature. The calculated Schottky barrier height (SBH) of the as‐deposited Pt/Ru Schottky contact is found to be 0.69 eV cu