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Electrical properties of p-type GaP Schottky barrier under stress

✍ Scribed by M. Kusaka; N. Hiraoka; M. Hirai; S. Okazaki

Publisher
Elsevier Science
Year
1980
Weight
54 KB
Volume
91
Category
Article
ISSN
0167-2584

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## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte