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Electrical properties of nitrogen implanted GaSe single crystal

✍ Scribed by O. Karabulut; M. Parlak; R. Turan; U. Serincan; E. Tasarkuyu; B. G. Akįnoglu

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
150 KB
Volume
38
Category
Article
ISSN
0232-1300

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✍ Dr. R. D. Tomlinson; M. V. Yakushev; Prof. Dr. H. Neumann 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 418 KB 👁 1 views

## Abstract Both p‐type and n‐type CuInSe~2~ single crystals were implanted with 40 keV ^130^Xe^+^ ions up to doses of 5 · 10^16^ cm^−2^. Implanted layers on p‐type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implant