𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals

✍ Scribed by O. Karabulut; M. Parlak; R. Turan; U. Serincan; B. G. Akınoğlu

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
182 KB
Volume
41
Category
Article
ISSN
0232-1300

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the Analysis of Hydrogen in as grown
On the Analysis of Hydrogen in as grown and Ion Implanted GaAs Single Crystals
✍ M. Udhayasankar; J. Kumar; P. Ramasamy; D.K. Avasthi; D. Kabiraj 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 139 KB 👁 2 views

Hydrogen detection and analysis was carried out on the undoped semi-insulating (S.I.) gallium arsenide (GaAs) single crystal using conventional elastic recoil detection analysis (ERDA) technique with high energy, heavy ion beam. Presence of hydrogen (nearly 3 x 10 20 atoms/cc) has been observed on t

Flux Bridgman growth and the influence o
Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals
✍ Jiayue Xu; Qingbo He; Hui Shen; Min Jin; Yan Zhang; Xinhua Li 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 120 KB 👁 2 views

## Abstract Transparent ZnO crystals were obtained by the flux Bridgman method from high temperature solution of 22 mol% ZnO‐78 mol% PbF~2~ system. The influence of annealing temperatures on the photoluminescence (PL) of ZnO crystal was investigated. An ultraviolet emission peak at about 379 nm was