Optical properties of helium implanted inp single crystals
✍ Scribed by Dr. W. Hörig; Dr. V. F. Orlenko; Dr. H. Neumann; Dr. C. Ascheron
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 248 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
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## Abstract Both p‐type and n‐type CuInSe~2~ single crystals were implanted with 40 keV ^130^Xe^+^ ions up to doses of 5 · 10^16^ cm^−2^. Implanted layers on p‐type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implant
Bi 2 Se 3-x As x single crystals with the As content of c As = 0 to 2.0x10 19 atoms/cm 3 prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency ω p , optica