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Electrical properties of narrow-gap HgMnTe Schottky diodes

✍ Scribed by L. A. Kosyachenko; A. V. Markov; S. É. Ostapov; I. M. Rarenko; V. M. Sklyarchuk; Ye. F. Sklyarchuk

Book ID
110132592
Publisher
Springer
Year
2002
Tongue
English
Weight
105 KB
Volume
36
Category
Article
ISSN
1063-7826

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## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to n‐type GaN (4.07 × 10^18^ cm^–3^) have been investigated before and after annealing at 600 °C. Measurements show that the Schottky barrier height of the as‐deposited sample was 0.81 eV (__I__–__V__) and 1.02