Electrical properties of Schottky diodes based on Carbazole
β Scribed by Sreejith K. Pisharady; C. S. Menon; C. Sudarshanakumar
- Publisher
- Springer
- Year
- 2006
- Tongue
- English
- Weight
- 346 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0022-2461
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The electrical properties of Schottky diodes and p-n junctions on GaSb ((100), doped with 2 x 10 t7 cm-~ tellurium) were examined. Capacitance-voltage measurements at 300 K show barrier heights of 0.65 eV (Al), 0.6 eV (Au, In, Pd), 0.5 eV (Ga) and 0.42 eV (Sb). The barrier heights tend to track the
## Abstract The electrical and structural properties of molybdenum (Mo) Schottky contact to nβtype GaN (4.07 Γ 10^18^ cm^β3^) have been investigated before and after annealing at 600 Β°C. Measurements show that the Schottky barrier height of the asβdeposited sample was 0.81 eV (__I__β__V__) and 1.02