Electrical properties of nanoclusters in hydrogenized monocrystalline silicon

✍ Scribed by Kh.A. Abdullin; Yu.V. Gorelkinskii; B.N. Mukashev; A.S. Serikkanov

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 258 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.167

✦ Synopsis

Electrical properties of bistable shallow donors in monocrystalline silicon which are introduced by proton implantation followed by annealing at 300-450 C have been studied by Hall effect and conductivity measurements. The temperature dependences of equilibrium and non-equilibrium carrier concentration, relaxation kinetics and carrier mobility were measured. The obtained experimental data demonstrate that the carrier concentration in the samples is controlled by defect nanoclusters.