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The electronic structure and luminescence properties of porous silicon and silicon nanoclusters

โœ Scribed by J.L. Gavartin; C.C. Matthai


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
340 KB
Volume
35
Category
Article
ISSN
0921-5107

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Structure and optical properties of poro
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Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi