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Electrical properties of gold at dislocations in silicon

✍ Scribed by O. Voß; V. V. Kveder; W. Schröter; M. Seibt

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
119 KB
Volume
2
Category
Article
ISSN
1862-6351

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Electrical properties of gold in disloca
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✍ Voß, O. ;Kveder, V. V. ;Seibt, M. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 169 KB

## Abstract We present results of the electrical properties of gold‐decorated dislocations in silicon studied by means of Deep Level Transient Spectroscopy (DLTS). We investigated the effect of the gold by measuring DLTS spectra from Schottky diodes having different gold concentrations but same the

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## Abstract The electrical properties of silicon materials containing dislocations are strongly affected by deep levels at or close to the dislocation core. Such deep levels are frequently thought to be due to metal impurities that are chemically bound to the dislocation core, segregated in the lon