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Electrical Properties of Dislocations in Ge and Si

✍ Scribed by W. Schröter; R. Labusch


Publisher
John Wiley and Sons
Year
1969
Tongue
English
Weight
683 KB
Volume
36
Category
Article
ISSN
0370-1972

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The recombination at misfit dislocations in Si(Ge) structures was studied by the technique of electron-beam-induced current. The contrast temperature dependence was interpreted using the Schokley-Read-Hall recombination theory. Different situations were observed: either a dominance of shallow centre