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Electrical properties of CdSe thin films covered by dielectric layers of SixOy or Dy2O3

✍ Scribed by Šnejdar, V. ;Jerhot, J. ;Berková, D. ;Zbončák, M.

Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
360 KB
Volume
15
Category
Article
ISSN
0031-8965

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In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)