Electrical properties of cadmium diarsenide at low temperatures

✍ Scribed by E. Żdanowicz; W. Wojciechowski; G. Biskupski; J. Misiewicz

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 475 KB
• Volume: 21
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90266-p

✦ Synopsis

Electrical transport of n-CdAs2, a semiconducting compound of the II-V group with a tetragonal unit cell, energy gap Eg = 1 eV and with the surface of constant energy as a simple ellipsoid of revolution directed along the c axis, has been studied. The conductivity measurements were performed in lightly compensated CdAs 2 single crystals within the temperature range 1.6-100 K and in magnetic fields up to 18 T. The Hall effect was observed in hopping conduction of low magnetic fields up to 1.5 T. All investigated samples indicated behaviour typical for the insulating side of the metal-non-metal transition. The processes of impurity conduction are discussed as a function of the temperature and the magnetic field. The hopping regime in the low temperature conduction was studied as a function of magnetic field and the results obtained are discussed on the basis of the percolation model for different magnetic field regions.

The data concerning the properties of the investigated n-CdAs2 samples are listed in Table 1. The samples were cut from single crystals of CdAs: in two