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Positron trapping in cadmium at low temperatures

✍ Scribed by S. Kupca; B.G. Hogg; D.P. Kerr


Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
233 KB
Volume
77
Category
Article
ISSN
0375-9601

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Electrical properties of cadmium diarsen
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Electrical transport of n-CdAs2, a semiconducting compound of the II-V group with a tetragonal unit cell, energy gap Eg = 1 eV and with the surface of constant energy as a simple ellipsoid of revolution directed along the c axis, has been studied. The conductivity measurements were performed in ligh