The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.
Electrical properties of a-Ge-Se-In thin films
β Scribed by I. Sharma; S.K. Tripathi; A. Monga; P.B. Barman
- Book ID
- 116671092
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 140 KB
- Volume
- 354
- Category
- Article
- ISSN
- 0022-3093
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