Structure, optical and electrical properties of Ge30Sb10Se60 thin films

✍ Scribed by K.A. Aly; A.M. Abousehly; M.A. Osman; A.A. Othman

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 286 KB
• Volume: 403
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.10.019

✦ Synopsis

Amorphous Ge 30 Sb 10 Se 60 chalcogenide thin films were prepared onto cleaned glass substrates using thermal evaporation technique. The structure of the as-prepared films was confirmed to be amorphous using X-ray diffraction. The optical absorption coefficient (a) for the as-deposited films was calculated by using reflectance and transmittance measurements in the wavelength range 400-900 nm. The optical constants (refractive index (n) and the extinction coefficient (k)) were controlled by Murman's exact equations. The effects of annealing temperature in the temperature range 300-658 K on the optical and electrical properties of the as-prepared Ge 30 Sb 10 Se 60 thin films were discussed in details. It was found that both the optical band gap E opt g and the activation energy for electrical conduction DE dc increase with increasing the annealing temperature up to the glass transition temperature (T g ), followed by a remarkable decrease with the increase of annealing temperature above T g . The obtained results were interpreted on the basis of amorphous-crystalline transformations.