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Optical, electrical and the related parameters of amorphous Ge–Bi–Se thin films

✍ Scribed by A. El-Korashy; N. El-Kabany; H. El-Zahed

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
244 KB
Volume
365
Category
Article
ISSN
0921-4526

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✦ Synopsis

The related optical and electrical parameters of amorphous Ge-Bi-Se thin films were studied. The dependence of optical and electrical properties on the Bi content was observed in most compositions. At Bi 410 at% the behavior show a switch from p to n type conduction mechanism. The correlation between the optical band gap E g and the average heats of atomization H s were observed. The results indicated that both the number of topological constant N con and the radial and angular N a , N b valence force constants exhibit the same trend with increasing Bi content. On the other hand, the mean bond energy /ES increases with increasing Bi content to x ¼ 15 at%. It may be concluded that /ES is a function of the mean coordination number N co , the type of bonds, the degree of cross-linking and the band energy forming the network.

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