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Electrical properties and topography of SnO2 thin films prepared by reactive sputtering

โœ Scribed by J.-L Brousseau; H Bourque; A Tessier; R.M Leblanc

Book ID
108418361
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
365 KB
Volume
108
Category
Article
ISSN
0169-4332

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Thin films of ZrO 2 were prepared by reactive magnetron sputtering. Annealing of the films exhibited a drastic change in the properties due to improved crystallinity and packing density. The root mean square roughness of the sample observed from atomic force microscope is about 5.75 nm which is comp