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Electrical properties and structures of the MOCVD-AIN/GaAs interface

✍ Scribed by S. Fujieda; K. Akimoto; I. Hirosawa; Y. Mochizuki; J. Mizuki; Y. Matsumoto; J. Matsui

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
432 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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The structural and electrical behaviour of Ni/Ge layers deposited onto n-type GaAs by electron beam evaporation were studied. The samples have been annealed for 20 min at different temperatures in flowing forming gas-H 2 : N 2 (5% : 95%)-in a tube furnace. When the annealing temperature was increase