𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures

✍ Scribed by A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. P. Zhang; F. Ren; S. J. Pearton; J. -I. Chyi; T. -E. Nee; C. -C. Chou; C. -M. Lee

Book ID
107452589
Publisher
Springer US
Year
2001
Tongue
English
Weight
172 KB
Volume
30
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

TEM investigations of (In,Ga)N/GaN quant
TEM investigations of (In,Ga)N/GaN quantum structures
✍ Manolaki, P. ;HΓ€usler, I. ;Kirmse, H. ;Neumann, W. ;SmaΕ‚c-Koziorowska, J. ;Skier πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 939 KB

## Abstract The paper reports on the influence of the growth temperature on the structural and chemical properties of (In,Ga)N quantum wells (QWs) on GaN. Two different samples A and B were fabricated. The QWs of the sample A were grown at a constant temperature of 600 Β°C. For the QWs of the sample