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Electrical properties and photoluminescence studies of Ge-implanted GaAs

✍ Scribed by S. S. Chan; G. T. Marcyk; B. G. Streetman

Book ID
112814677
Publisher
Springer US
Year
1981
Tongue
English
Weight
914 KB
Volume
10
Category
Article
ISSN
0361-5235

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## Abstract The surface of silicon‐doped GaAs (100) grown by the vertical Bridgman method has been implanted with H^+^ ions at 30 keV for various doses from 10^14^ to 10^17^ cm^–2^ and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantat