An alkoxide-based sol-gel method was used to fabricate Ba Sr TiO thin films doped by Bi from 5 to 20 0.6 0.4 3 mol% on a Pt / Ti / SiO / Si substrate. The structural and dielectric properties of BST thin films were investigated 2 as a function of Bi dopant concentration. The dielectric properties of
✦ LIBER ✦
Electrical properties and extension mechanism of Ohmic region of sol–gel derived Ba0.7Sr0.3TiO3thin films by Zn doping
✍ Scribed by Zhijun Ma; Tianjin Zhang; Jingyang Wang
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 451 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0957-4522
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