Structure and dielectric properties of Bi-doped Ba0.6Sr0.4TiO3 thin films fabricated by sol–gel method

✍ Scribed by Kyoung-Tae Kim; Chang-Il Kim

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 382 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)01008-0

✦ Synopsis

An alkoxide-based sol-gel method was used to fabricate Ba Sr TiO thin films doped by Bi from 5 to 20 0.6 0.4 3 mol% on a Pt / Ti / SiO / Si substrate. The structural and dielectric properties of BST thin films were investigated 2 as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped Ba Sr TiO thin film showed the 0.6 0.4 3 27 lowest value of 5.13 3 10 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped Ba Sr TiO thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi-doped 0.6 0.4 3 Ba Sr TiO thin films were 333, 0.0095, and 31.1%, respectively.