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Electrical investigation of the Al/porous Si/p+-Si heterojunction

โœ Scribed by Cherif, A.; Jomni, S.; Hannachi, R.; Beji, L.

Book ID
118231667
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
526 KB
Volume
409
Category
Article
ISSN
0921-4526

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Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It