Electrical demonstration of thermally stable Ni silicides on Si1−xCx epitaxial layers
✍ Scribed by V. Machkaoutsan; P. Verheyen; M. Bauer; Y. Zhang; S. Koelling; A. Franquet; K. Vanormelingen; R. Loo; C.S. Kim; A. Lauwers; N. Horiguchi; C. Kerner; T. Hoffmann; E. Granneman; W. Vandervorst; P. Absil; S.G. Thomas
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 644 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
To clarify the oxide growth mechanism on strained Si surfaces, the thermal oxidation reaction kinetics of an Si 1-x C x (x 0.1) alloy layer with a c(4 × 4) structure grown on Si(0 0 1) surfaces by carbonization with ethylene 636 • C was investigated using RHEED combined with AES. Upon staring the ox
The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of