Electrical conduction in low temperature grown InP

✍ Scribed by K. Khirouni; H. Maaref; J.C. Bourgoin; J.C. Garcia

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 216 KB
• Volume: 22
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90229-g

✦ Synopsis

Electric conduction has been studied vs. frequency w and temperature T in InP layers grown at low temperature. The T and ~o behaviours of the conductivity are found to be typical of a hopping process in a partially defect filled band, very similar to that observed in disordered materials. We have demonstrated .the location of the Fermi level. The results are analysed in terms of a recent theory developed by Emin (D. Emin, Phys. Rev. B, 46 (1992) 9419).