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Electrical properties of diamond films grown at low temperature

✍ Scribed by Chia-Fu Chen; Sheng-Hsiung Chen; Kuen-Mo Lin


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
611 KB
Volume
270
Category
Article
ISSN
0040-6090

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Titanium oxynitride (TiN x O y ) thin films were deposited by low-pressure metalΒ±organic CVD (LP-MOCVD) on (100) silicon, sapphire, and polycrystalline alumina substrates. Titanium isopropoxide (TIP) and ammonia were used as precursors. The influence of the growth temperature, ranking from 450 C to