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Electrical conduction and breakdown properties of silicon nitride films

✍ Scribed by D. Mangalaraj; M. Radhakrishnan; C. Balasubramanian


Publisher
Springer
Year
1982
Tongue
English
Weight
337 KB
Volume
17
Category
Article
ISSN
0022-2461

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Effect of a silicon nitride buffer layer
✍ B.Y. Wang; Hao Wang; C. Ye; Y. Wang; Y. Ye; W.F. Wang πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 495 KB

Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 Β°C in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer