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Electrical characterization of thiols self-assembled layers on GaP (1 1 1) structures

✍ Scribed by R.V. Ghita; V. Lazarescu; C. Logofatu; C.C. Negrila; M.F. Lazarescu


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
207 KB
Volume
11
Category
Article
ISSN
1369-8001

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MBE growth and characterization of GaAs1
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We investigated the growth of GaAs 1Γ€x Sb x (x ΒΌ 1.0, 0.82, 0.69, 0.44, 0.0) layers on Si (0 0 1) substrates using AlSb as a buffer layer. Epilayers were grown as a function of As beam equivalent pressure (BEP) under a constant Sb BEP, and they were then characterized by atomic force microscopy (AFM