✦ LIBER ✦

Electrical characterization of low temperature He-ion irradiated GaN

✍ Scribed by M Hayes; S.A Goodman; F.D Auret

Book ID: 114170672
Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 102 KB
Volume: 148
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(98)00722-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical and structural characterizati

Electrical and structural characterization of ion implanted GaN

✍ M. Usman; A. Nazir; T. Aggerstam; M.K. Linnarsson; A. Hallén 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 457 KB

Electrical characterization of H+ ion ir

Electrical characterization of H+ ion irradiated n-ZnO

✍ M. Hayes; F.D. Auret; P.J. Janse van Rensburg; J.M. Nel; W. Wesch; E. Wendler 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 136 KB

Schottky barrier diodes (SBD's) were fabricated with 20/80/40/80 nm Ti/Al/Pt/Au ohmic contacts on the O face and circular 0.5 mm in diameter, 50 nm thick Ru Schottky contacts in the Zn face. Current (I) deep level transient spectroscopy (I-DLTS) was used to study the shallow level defects introduced

Electrical and optical isolation of GaN

Electrical and optical isolation of GaN by high energy ion irradiation

✍ M. Senthil Kumar; G. Sonia; D. Kanjilal; R. Dhanasekaran; J. Kumar 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 134 KB

Electrical defects introduced during hig

Electrical defects introduced during high-temperature irradiation of GaN and AlGaN

✍ M. Hayes; F.D. Auret; L. Wu; W.E. Meyer; J.M. Nel; M.J. Legodi 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 211 KB

Emission kinetics of electron traps intr

Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation

✍ F.D Auret; S.A Goodman; M.J Legodi; W.E Meyer 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 102 KB

Amorphization of AlAu by low temperature

Amorphization of AlAu by low temperature ion irradiation

✍ A. Schmid; P. Ziemann 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 469 KB