Electrical characterization of H+ ion irradiated n-ZnO

✍ Scribed by M. Hayes; F.D. Auret; P.J. Janse van Rensburg; J.M. Nel; W. Wesch; E. Wendler

• Book ID: 103861842
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 136 KB
• Volume: 257
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2007.01.033

✦ Synopsis

Schottky barrier diodes (SBD's) were fabricated with 20/80/40/80 nm Ti/Al/Pt/Au ohmic contacts on the O face and circular 0.5 mm in diameter, 50 nm thick Ru Schottky contacts in the Zn face. Current (I) deep level transient spectroscopy (I-DLTS) was used to study the shallow level defects introduced during 1.8 MeV proton irradiations with fluences ranging from 1 • 10 13 cm À2 to 2.4 • 10 14 cm À2 . These measurements revealed that this irradiation introduced a defect with an energy level at 0.03-0.036 eV below the conduction band and with an electron capture cross section of 9 • 10 À16 to about 1.4 • 10 À15 cm 2 . This defect may be hydrogen-related as theory has predicted that hydrogen forms a shallow donor in ZnO, or it may be due to the Zn I , as it was reported that electron irradiation with an energy of >1.6 MeV produces the Zn I in ZnO which is a shallow level defect at 0.03 eV below the conduction band.