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Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal–Oxide–Semiconductor Capacitors

✍ Scribed by F. C. J. Kong; S. Dimitrijev; J. Han

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Energy position of the active near-inter

✍ Haasmann, D.; Dimitrijev, S. 📂 Article 📅 2013 🏛 American Institute of Physics 🌐 English ⚖ 501 KB

Extraction of SiO2/SiC interface trap pr

✍ Yanqing Deng; Wei Wang; Qizhi Fang; Mahalingam B. Koushik; T. Paul Chow 📂 Article 📅 2006 🏛 Springer US 🌐 English ⚖ 147 KB

Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal&#x2013;Oxide&#x2013;Semiconductor Capacitors