𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical characteristics and model for recessed channel fin field-effect transistor

✍ Scribed by Kim, K.; Yoshida, M.; Kahng, J.-R.; Moon, J.-S.; Roh, Y.

Book ID
118185004
Publisher
The Institution of Electrical Engineers
Year
2010
Tongue
English
Weight
249 KB
Volume
46
Category
Article
ISSN
0013-5194

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

DC and RF Characteristics of AlN/GaN Dop
DC and RF Characteristics of AlN/GaN Doped Channel Heterostructure Field Effect Transistor
✍ Daumiller, I. ;Schmid, P. ;Kohn, E. ;Kirchner, C. ;Kamp, M. ;Ebeling, K. J. ;Pon πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 113 KB

First small signal, large signal and rf power characteristics of experimental 3 mm gate length AlN/GaN devices are reported between RT and 200 C. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the developme