𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC

✍ Scribed by D. Defives; O. Durand; F. Wyczisk; O. Noblanc; C. Brylinski; F. Meyer

Book ID
108411142
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
689 KB
Volume
55
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Cr/4H-SiC Schottky contacts investigated
Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques
✍ Koliakoudakis, C. ;Dontas, J. ;Karakalos, S. ;Kayambaki, M. ;Ladas, S. ;Konstant 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 243 KB

## Abstract Cr/4H‐SiC Schottky contacts were investigated by standard electrical measurements and photoelectron spectroscopy. XPS (X‐ray Photoelectron Spectroscopy) measurements were performed during the in‐situ formation of the metal‐semiconductor interface formation as well as after several annea

Barrier inhomogeneities and electrical c
Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments
✍ Pérez, R. ;Mestres, N. ;Montserrat, J. ;Tournier, D. ;Godignon, P. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 127 KB

## Abstract The analysis of “nonideal” behaviour in current–voltage characteristics of fabricated Schottky diodes on 4H–SiC is carried out. An accurate theoretical modelling of the effect of the presence of inhomogeneities on the electron transport across the metal‐semiconductor interface is applie

Electrical analysis and interface states
Electrical analysis and interface states evaluation of Ni Schottky diodes on 4H-SiC thick epilayers
✍ Porro, Samuele ;Ciechonski, Rafal R. ;Syväjärvi, Mikael ;Yakimova, Rositza 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 244 KB

## Abstract This work has been focused on characterization of thick 4H‐SiC layers produced by sublimation epitaxy. Nickel Schottky contacts have been fabricated in order to characterize the grown material and evaluate the interfacial layer between metal and semiconductor. The characterization study