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Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques

✍ Scribed by Koliakoudakis, C. ;Dontas, J. ;Karakalos, S. ;Kayambaki, M. ;Ladas, S. ;Konstantinidis, G. ;Zekentes, K. ;Kennou, S.

Book ID
105364948
Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
243 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Cr/4H‐SiC Schottky contacts were investigated by standard electrical measurements and photoelectron spectroscopy. XPS (X‐ray Photoelectron Spectroscopy) measurements were performed during the in‐situ formation of the metal‐semiconductor interface formation as well as after several annealing steps of the Cr/4H‐SiC contact. A barrier height of 1.2 eV was determined from XPS measurements. The electrical measurements have showed the necessity of thermal annealing at 600 °C to obtain best performance (Φ~B~ = 1.05 eV from C‐V measurements and 0.94 eV from I‐V measurements with ideality factor n = 1.08). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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