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Electrical and photoelectric properties of a Pd-p0-Si-p-Si structure with a disordered intermediatep0layer

✍ Scribed by S. V. Slobodchikov; Kh. M. Salikhov; E. V. Russu; M. M. Meredov; A. I. Yazlyeva


Book ID
110119707
Publisher
Springer
Year
1997
Tongue
English
Weight
87 KB
Volume
31
Category
Article
ISSN
1063-7826

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The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the SchrΓΆdinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat