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Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature

✍ Scribed by D. Vazquez-Cortas; S. Shimomura; M. Lopez-Lopez; E. Cruz-Hernandez; S. Gallardo-Hernandez; Y. Kudriavtsev; V.H. Mendez-Garcia

Book ID: 116630266
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 601 KB
Volume: 347
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.03.008

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