Electrical and optical properties of p-type ZnO
โ Scribed by Look, David C
- Book ID
- 120268955
- Publisher
- Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 167 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0268-1242
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
ZnO films were grown on Si(100) and quartz substrates by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD), using metal organic DEZ (diethlyzinc), and a gas mixture of Ar and O 2 . The process temperature ranged between room temperature and 400 ยฐC. ZnO films showed both p-and n
In this study, p-type ZnO films with excellent electrical properties were prepared by ultrasonic spray pyrolysis (USP) combined with a N-Al co-doping technique. The influence of post-growth annealing conditions, i.e., annealing ambient and temperature, on optical and electrical properties of p-type