ZnO films were grown on Si(100) and quartz substrates by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD), using metal organic DEZ (diethlyzinc), and a gas mixture of Ar and O 2 . The process temperature ranged between room temperature and 400 ยฐC. ZnO films showed both p-and n
โฆ LIBER โฆ
Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films
โ Scribed by P. Cao; D.X. Zhao; J.Y. Zhang; D.Z. Shen; Y.M. Lu; B. Yao; B.H. Li; Y. Bai; X.W. Fan
- Book ID
- 108060411
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 388 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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