Electrical and optical properties of amorphous Te40As38Ge10Si12thin films
β Scribed by H. T. El-Shair
- Publisher
- Springer
- Year
- 1991
- Tongue
- English
- Weight
- 319 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1432-0630
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π SIMILAR VOLUMES
Amorphous Ge 30 Sb 10 Se 60 chalcogenide thin films were prepared onto cleaned glass substrates using thermal evaporation technique. The structure of the as-prepared films was confirmed to be amorphous using X-ray diffraction. The optical absorption coefficient (a) for the as-deposited films was cal
The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.