Electrical properties of Al2O3 gate diel
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Changhai Lin; Jinfeng Kang; Dedong Han; Dayu Tian; Wei Wang; Jinghua Zhang; Meng
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Article
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2003
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Elsevier Science
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English
⚖ 119 KB
Al O gate dielectric thin films were deposited by reactive dc magnetron sputtering. The electrical properties 2 3 and the carrier transport mechanisms were studied. The results indicate that higher temperature annealing in oxygen ambient is helpful to improve the electrical properties of Al O gate d