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Electrical activity of multivacancy defects in silicon

✍ Scribed by P. Santos; J. Coutinho; M. J. Rayson; P. R. Briddon

Book ID
115561609
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
202 KB
Volume
9
Category
Article
ISSN
1862-6351

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## Abstract Recent experiments have shown that vacancy clusters are common defects in all types of monocrystalline brown diamond. This is believed to be due to an enhanced stability of the bounding γ€ˆ111〉 or γ€ˆ110〉 surfaces, arising from the formation of π‐bonded chains. These chains lead to broad ba