✦ LIBER ✦

Electric Resistance between Ti and Abraded Si(100)

✍ Scribed by Iwakuro, H. ;Kuroda, T. ;Lin, Zhangda.

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 142 KB
Volume: 160
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(199703)160:1<77::aid-pssa77>3.0.co;2-v

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical characteristics of Ti-Si(100)

Electrical characteristics of Ti-Si(100) interfaces

✍ M.O. Aboelfotoh; L. Stolt; C.S. Petersson 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 501 KB

Correlation between electrical and micro

Correlation between electrical and microscopic properties of TiSi interfaces

✍ X Wallart; J.P Nys; H.S Zeng; G Dalmai 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 271 KB

Evidence for formation of low resistance

Evidence for formation of low resistance TiSi2 layer with Ti/NSi/Ti/native oxide/PSi (100) stack

✍ Awatar Singh; W.S. Khokle; R.K. Jaiswal; S.A.A. Shah 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 117 KB

Epitaxial growth of conductive strontium

Epitaxial growth of conductive strontium-vanadate films on Si(100) substrates and their electrical resistivities

✍ B.K. Moon; H. Ishiwara 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 448 KB

The thermal conductivity, thermoelectric

The thermal conductivity, thermoelectric power, and electrical resistivity of thorium between 5 and 100° K

✍ P Haen; G.T Meaden 📂 Article 📅 1965 🏛 Elsevier Science 🌐 English ⚖ 452 KB

THE measurement of the transport properties of thorium at low temperatures has until fairly lately been largely overlooked, although judging by the electrical resistivity measurements of Meissner and Voigt t metal of good purity was available for research purposes as long ago as 1930. In fact, it is

Electrical resistivity and surface profi

Electrical resistivity and surface profile due to Al/Si/Ti reaction kinetics on an oxidised silicon wafer

✍ A. Singh 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 197 KB

Electrical resistivity and surface profile due to AI/Si/Ti reaction kinetics on an oxidised silicon wafer