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Electric properties of (SiC)1 −x(AlN)x/SiC anisotropic heterostructures

✍ Scribed by B. A. Bilalov; M. K. Kurbanov; A. A. Gadzhiev; Sh. M. Ramazanov

Book ID
110215528
Publisher
Springer
Year
2011
Tongue
English
Weight
183 KB
Volume
40
Category
Article
ISSN
1063-7397

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Interface properties of an AlN/(AlN)x(Si
Interface properties of an AlN/(AlN)x(SiC)1-x/4H-SiC heterostructure
✍ Edgar, J. H. ;Gu, Z. ;Gu, L. ;Smith, David J. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 332 KB

## Abstract The crystal structure and compositional changes near the two interfaces of a AlN/(AlN)__~x~__ (SiC)~1–__x__~ /4H‐SiC heterostructure prepared by sublimation‐recondensation growth were examined by cross‐sectional transmission electron microscopy. Deposition of an (AlN)__~x~__ (SiC)~1–__x