๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electric properties of GaN : Zn MIS-type light emitting diode

โœ Scribed by Md.Rezaul Huque Khan; Isamu Akasaki; Hiroshi Amano; Nobuo Okazaki; Katsuhide Manabe

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
375 KB
Volume
185
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Electrical characteristics of In/ITO p-t
Electrical characteristics of In/ITO p-type ohmic contacts for high-performance GaN-based light-emitting diodes
โœ Joon-Ho Oh; Kyoung-Kook Kim; Hyun-Gi Hong; Kyeong-Jae Byeon; Heon Lee; Sang-Won ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 573 KB

We have investigated the annealing-induced improved electrical properties of In(10 nm)/ ITO(200 nm) contacts with p-type GaN. The contacts become ohmic with a specific contact resistance of 2.75 ร‚ 10 -3 O cm 2 upon annealing at 650

Properties of Quantum Well Excitons in G
Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures
โœ Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 195 KB ๐Ÿ‘ 2 views

Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well