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Electric field dependence of quantum‐well eigenstates

✍ Scribed by Bloss, Walter L.


Book ID
115448536
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
935 KB
Volume
65
Category
Article
ISSN
0021-8979

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In this paper, Ge Si / Si quantum well films grown by molecular beam epitaxy were used to study the 0.4 0.6 electric field effects of absorption spectrum. The absorption spectra of Ge Si / Si quantum wells under 0.4 0.6 electric field were investigated by photocurrent measurements. We have observed